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PRELIMINARY DATA SHEET
1GB Unbuffered DDR SDRAM DIMM
EBD11ED8ABFB (128M words x 72 bits, 2 Banks)
Description
The EBD11ED8ABFB is 128M words x 72 bits, 2 banks Double Data Rate (DDR) SDRAM unbuffered module, mounted 18 pieces of 512M bits DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each TSOP on the module board.
Features
* 184-pin socket type dual in line memory module (DIMM) PCB height: 31.75mm Lead pitch: 1.27mm * 2.5V power supply * Data rate: 333Mbps/266Mbps (max.) * 2.5 V (SSTL_2 compatible) I/O * Double Data Rate architecture; two data transfers per clock cycle * Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver * Data inputs and outputs are synchronized with DQS * 4 internal banks for concurrent operation (Component) * DQS is edge aligned with data for READs; center aligned with data for WRITEs * Differential clock inputs (CK and /CK) * DLL aligns DQ and DQS transitions with CK transitions * Commands entered on each positive CK edge; data referenced to both edges of DQS * Auto precharge option for each burst access * Programmable burst length: 2, 4, 8 * Programmable /CAS latency (CL): 2, 2.5 * Refresh cycles: (8192 refresh cycles /64ms) 7.8s maximum average periodic refresh interval * 2 variations of refresh Auto refresh Self refresh
Document No. E0295E20 (Ver. 2.0) Date Published August 2002 (K) Japan URL: http://www.elpida.com Elpida Memory , Inc. 2002
EBD11ED8ABFB
Ordering Information
Data rate Mbps (max.) 333 266 266 Component JEDEC speed bin (CL-tRCD-tRP) DDR333B (2.5-3-3) DDR266A (2-3-3) DDR266B (2.5-3-3) Contact pad Gold
Part number EBD11ED8ABFB -6B EBD11ED8ABFB -7A EBD11ED8ABFB -7B
Package 184-pin DIMM
Mounted devices EDD5108ABTA
Pin Configurations
Front side 1 pin 52 pin 53 pin 92 pin
93 pin Back side
144 pin 145 pin 184 pin
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Pin name VREF DQ0 VSS DQ1 DQS0 DQ2 VDD DQ3 NC NC VSS DQ8 DQ9 DQS1 VDDQ CK1 /CK1 VSS DQ10 DQ11 CKE0 VDDQ DQ16 DQ17 DQS2 VSS A9 DQ18
Pin No. 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74
Pin name DQS8 A0 CB2 VSS CB3 BA1 DQ32 VDDQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 VDDQ /WE DQ41 /CAS VSS DQS5 DQ42 DQ43 VDD NC DQ48 DQ49 VSS
Pin No. 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120
Pin name VSS DQ4 DQ5 VDDQ DM0/DQS9 DQ6 DQ7 VSS NC NC NC VDDQ DQ12 DQ13 DM1/DQS10 VDD DQ14 DQ15 CKE1 VDDQ NC DQ20 A12 VSS DQ21 A11 DM2/DQS11 VDD
Pin No. 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166
Pin name VSS DM8/DQS17 A10 CB6 VDDQ CB7 VSS DQ36 DQ37 VDD DM4/DQS13 DQ38 DQ39 VSS DQ44 /RAS DQ45 VDDQ /CS0 /CS1 DM5/DQS14 VSS DQ46 DQ47 NC VDDQ DQ52 DQ53
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Pin No. 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Pin name A7 VDDQ DQ19 A5 DQ24 VSS DQ25 DQS3 A4 VDD DQ26 DQ27 A2 VSS A1 CB0 CB1 VDD Pin No. 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 Pin name /CK2 CK2 VDDQ DQS6 DQ50 DQ51 VSS VDDID DQ56 DQ57 VDD DQS7 DQ58 DQ59 VSS NC SDA SCL Pin No. 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 Pin name DQ22 A8 DQ23 VSS A6 DQ28 DQ29 VDDQ DM3/DQS12 A3 DQ30 VSS DQ31 CB4 CB5 VDDQ CK0 /CK0 Pin No. 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 Pin name NC VDD DM6/DQS15 DQ54 DQ55 VDDQ NC DQ60 DQ61 VSS DM7/DQS16 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Pin Description
Pin name A0 to A12 BA0, BA1 DQ0 to DQ63 CB0 to CB7 /RAS /CAS /WE /CS0, /CS1 CKE0, CKE1 CK0 to CK2 /CK0 to /CK2 DQS0 to DQS8 DM0 to DM8/DQS9 to DQS17 SCL SDA SA0 to SA2 VDD VDDQ VDDSPD VREF VSS VDDID NC Function Address input Row address Column address Data input/output Check bit (Data input/output) Row address strobe command Column address strobe command Write enable Chip select Clock enable Clock input Differential clock input Input and output data strobe Input mask Clock input for serial PD Data input/output for serial PD Serial address input Power for internal circuit Power for DQ circuit Power for serial EEPROM Input reference voltage Ground VDD identification flag No connection A0 to A12 A0 to A9, A11
Bank select address
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Serial PD Matrix
Byte No. 0 1 2 3 4 5 6 7 8 9 Function described Number of bytes utilized by module manufacturer Total number of bytes in serial PD device Memory type Number of row address Number of column address Number of DIMM banks Module data width Module data width continuation DDR SDRAM cycle time, CL = 2.5 -6B -7A, -7B 10 SDRAM access from clock (tAC) -6B -7A, -7B 11 12 13 14 15 16 17 18 19 20 21 22 23 DIMM configuration type Refresh rate/type Primary SDRAM width Error checking SDRAM width SDRAM device attributes: Minimum clock delay back-to-back column access SDRAM device attributes: Burst length supported SDRAM device attributes: Number of banks on SDRAM device SDRAM device attributes: /CAS latency SDRAM device attributes: /CS latency SDRAM device attributes: /WE latency SDRAM module attributes SDRAM device attributes: General Minimum clock cycle time at CL = 2 -6B, -7A -7B 24 Bit7 1 0 0 0 0 0 0 0 Bit6 0 0 0 0 0 0 1 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 0 1 1 0 1 1 Bit5 Bit4 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 1 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 0 1 1 0 0 1 Bit3 0 1 0 1 1 0 1 0 0 0 0 0 0 0 0 1 1 0 1 0 1 0 0 0 0 0 0 0 0 0 1 0 Bit2 0 0 1 1 0 0 0 0 1 0 1 0 1 0 0 0 0 0 1 1 1 0 0 0 0 1 0 0 1 0 0 0 Bit1 Bit0 0 0 1 0 1 1 0 0 0 0 0 0 0 1 1 0 0 0 1 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 0 0 1 0 1 0 0 0 0 1 0 0 0 1 0 0 0 1 0 0 1 0 0 0 Hex value 80H 08H 07H 0DH 0BH 02H 48H 00H 04H 60H 75H 70H 75H 02H 82H 08H 08H 01H 0EH 04H 0CH 01H 02H 20H C0H 75H A0H 70H 75H 00H 48H 50H 18ns 20ns Comments 128 bytes 256 bytes DDR SDRAM 13 11 2 72 bits 0 SSTL2 6.0ns*1 7.5ns*1 0.7ns*1 0.75ns*1 ECC 7.6s x8 x8 1 CLK 2,4,8 4 2, 2.5 0 1 Differential Clock VDD 0.2V 7.5ns*1 10ns*1 0.7ns*1 0.75ns*1
Voltage interface level of this assembly 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 1 0 1
Maximum data access time (tAC) from clock at CL = 2 0 -6B -7A, -7B 0 0 Minimum row precharge time (tRP) -6B -7A, -7B 0 0
25 to 26 27
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Byte No. 28
Function described Minimum row active to row active delay (tRRD) -6B -7A, -7B Minimum /RAS to /CAS delay (tRCD) -6B -7A, -7B Minimum active to precharge time (tRAS) -6B -7A, -7B Module bank density Address and command setup time before clock (tIS) -6B -7A, -7B
Bit7 0 0 0 0 0 0 1 0 1
Bit6 0 0 1 1 0 0 0 1 0 1 0 1 1 1 1 0 0 1 1 1 0 0 0 1 1 0 0 1 0 0 1
Bit5 Bit4 1 1 0 0 1 1 0 1 0 1 0 0 0 0 0 0 1 0 0 0 1 1 1 0 1 0 0 0 0 1 1 1 1 0 1 0 0 0 1 1 1 1 0 1 0 1 0 1 0 0 0 1 0 1 1 1 0 0 1 0 1 1
Bit3 0 1 1 0 1 1 0 0 0 0 0 0 0 0 0 0 1 0 1 1 0 1 0 0 0 0 0 0 1 1 1
Bit2 0 1 0 0 0 1 0 1 0 1 0 1 0 1 0 0 1 1 0 0 0 1 0 1 1 0 0 1 1 0 1
Bit1 Bit0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 0 0 0 1 0 1 0 0 0 0 0 1 0 1 0 1 0 1 0 1 0 0 0 0 0 1 0 1 0 1 1 0 0 0 0 1 1
Hex value 30H 3CH 48H 50H 2AH 2DH 80H 75H 90H 75H 90H 45H 50H 45H 50H 00H 3CH 44H 48H 4BH 30H 2DH 32H 55H 75H 00H 00H 54H 0EH 39H 7FH
Comments 12ns 15ns 18ns 20ns 42ns 45ns 512M bytes 0.75ns*1 0.9ns*1 0.75ns*1 0.9ns*1 0.45ns*1 0.5ns*1 0.45ns*1 0.5ns*1 Future use 60ns*1 68ns*1 75ns*1 75ns*1 12ns*1 450ps*1 500ps*1 550ps*1 750ps*1 Future use
29
30
31 32
33
Address and command hold time after clock (tIH) 0 -6B -7A, -7B 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Data input setup time before clock (tDS) -6B -7A, -7B Data input hold time after clock (tDH) -6B -7A, -7B Superset information Active command period (tRC) -6B -7A, -7B Auto refresh to active/ Auto refresh command cycle (tRFC) -6B -7A, -7B SDRAM tCK cycle max. (tCK max.) Dout to DQS skew -6B -7A, -7B Data hold skew (tQHS) -6B -7A, -7B Superset information SPD Revision Checksum for bytes 0 to 62 -6B -7A -7B
34
35
36 to 40 41
42
43 44
45
46 to 61 62 63
64 to 65
Manufacturer's JEDEC ID code
Continuation code
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Byte No. 66 67 to 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
Function described Manufacturer's JEDEC ID code Manufacturer's JEDEC ID code Manufacturing location Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number -6B -7A, -7B Module part number -7A -6B, -7B Module part number Revision code Revision code Manufacturing date Manufacturing date Module serial number Manufacture specific data
Bit7 1 0 x 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 x x
Bit6 1 0 x 1 1 1 0 0 1 1 0 1 1 1 1 0 0 0 1 1 0 0 0 x x
Bit5 Bit4 1 0 x 0 0 0 1 1 0 0 1 0 0 0 0 1 1 1 0 0 1 1 1 x x 1 0 x 0 0 0 1 1 0 0 1 0 0 0 0 0 1 1 0 0 0 1 0 x x
Bit3 1 0 x 0 0 0 0 0 0 0 1 0 0 0 0 1 0 0 0 0 0 0 0 x x
Bit2 1 0 x 1 0 1 0 0 1 1 0 0 0 1 0 1 1 1 0 0 0 0 0 x x
Bit1 Bit0 1 0 x 0 1 0 0 0 0 0 0 0 1 1 1 0 1 1 0 1 0 0 0 x x 0 0 x 1 0 0 1 1 1 0 0 1 0 0 0 1 0 1 1 0 0 0 0 x x
Hex value FEH 00H xx 45H 42H 44H 31H 31H 45H 44H 38H 41H 42H 46H 42H 2DH 36H 37H 41H 42H 20H 30H 20H xx xx
Comments Elpida Memory (ASCII-8bit code) E B D 1 1 E D 8 A B F B -- 6 7 A B (Space) Initial (Space) Year code (HEX) Week code (HEX)
87
88 to 90 91 92 93 94 95 to 98 99 to 127
Note: These specifications are defined based on component specification, not module.
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Block Diagram
/CS0 RS DQS0 8 DQ0 to DQ7 RS DQS1 8 DQ8 to DQ15 RS DQS2 8 DQ16 to DQ23 RS DQS3 8 DQ24 to DQ31 RS DQS4 8 DQ32 to DQ39 RS DQS5 8 DQ40 to DQ47 RS DQS6 8 DQ48 to DQ55 RS DQS7 8 DQ56 to DQ63 RS DQS8 8 CB0 to CB7 RS DQS DQ /CS DM DQS DQ /CS DM RS DQS DQ /CS DM DQS DQ /CS DM RS DQS DQ /CS DM DQS DQ /CS DM RS DM7/DQS16 RS DQS DQ /CS DM DQS DQ /CS DM RS DM6/DQS15 RS DQS DQ /CS DM DQS DQ /CS DM RS DM5/DQS14 RS DQS DQ /CS DM DQS DQ /CS DM RS DM4/DQS13 RS DQS DQ /CS DM DQS DQ /CS DM RS DM3/DQS12 RS DQS DQ /CS DM DQS DQ /CS DM RS DM2/DQS11 RS DQS DQ /CS DM DQS DQ /CS DM RS DM1/DQS10 /CS1 RS DM0/DQS9
U1
U10
U11
U2
U3
U12
U13
U4
U14
U5
U6
U15
U16
U7
U8
U17
DM8/DQS17
U9
U18
3.3
* U1 to U18: 512M bits DDR SDRAM U20: 2k bits EEPROM RS: 22 VDD, VDDQ VREF VSS VDDID open Clock wiring Clock input CK0, /CK0 CK1, /CK1 CK2, /CK2 DDR SDRAMS 6DRAM loads 6DRAM loads 6DRAM loads U1 to U18 U1 to U18 U1 to U18
A0 to A12 3.3 BA0, BA1 /RAS /CAS 3.3 /WE CKE0 CKE1 3.3 3.3
A0 to A12 (U1 to U18) BA0, BA1 (U1 to U18) /RAS (U1 to U18) /CAS (U1 to U18) /WE (U1 to U18) CKE (U1, U3, U6, U8, U9, U11, U13, U14, U16) CKE (U2, U4, U5, U7, U10, U12, U15, U17, U18)
Serial PD SCL SCL SDA SDA
U20
A0 A1 A2
Note: Wire per Clock loading table/Wiring diagrams.
SA0 SA1 SA2 Notes: 1. The SDA pull-up resistor is required due to the open-drain/open-collector output. 2. The SCL pull-up resistor is recommended because of the normal SCL line inacitve "high" state.
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Logical Clock Net Structure
6DRAM loads DRAM1 5DRAM loads DRAM1
CLK DIMM connector
R = 120
DRAM2 DRAM3 DIMM connector DRAM4
R = 120
DRAM2 DRAM3
Capacitance DRAM5
/CLK DRAM5
DRAM6 4DRAM loads DRAM1 3DRAM loads
DRAM6 DRAM1
R = 120 DIMM connector
DRAM2 Capacitance DIMM connector Capacitance DRAM5
R = 120
Capacitance DRAM3
Capacitance DRAM5
DRAM6 2DRAM loads 1DRAM loads
Capacitance
DRAM1
Capacitance
R = 120 DIMM connector
Capacitance Capacitance DIMM connector Capacitance DRAM5
R = 120
Capacitance DRAM3
Capacitance
Capacitance
Capacitance
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Electrical Specifications
* All voltages are referenced to VSS (GND). * After power up, wait more than 200 s and then, execute power on sequence and auto refresh before proper device operation is achieved. Absolute Maximum Ratings
Parameter Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature Symbol VT VDD, VDDQ IO PD TA Tstg Value -0.5 to +3.6 -0.5 to +3.6 50 18 0 to +70 -55 to +125 Unit V V mA W C C 1 Note
Note: DDR SDRAM device specification. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70C) (DDR SDRAM Device Specification)
Parameter Supply voltage Symbol VDD,VDDQ VSS Input reference voltage Termination voltage Input high voltage Input low voltage Input voltage level, CK and /CK inputs Input differential cross point voltage, CK and /CK inputs Input differential voltage, CK and /CK inputs VREF VTT VIH (DC) VIL (DC) VIN (DC) VIX (DC) VID (DC) Min 2.3 0 0.49 x VDDQ VREF - 0.04 VREF + 0.15 -0.3 -0.3 0.5 x VDDQ - 0.2V 0.36 Typ 2.5 0 0.50 x VDDQ VREF -- -- -- 0.5 x VDDQ -- Max 2.7 0 0.51 x VDDQ VREF + 0.04 VDDQ + 0.3 VREF - 0.15 VDDQ + 0.3 Unit V V V V V V V 2 3 4 Notes 1
0.5 x VDDQ + 0.2V V VDDQ + 0.6 V 5, 6
Notes: 1.VDDQ must be lower than or equal to VDD. 2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns. 3. VIL is allowed to outreach below VSS down to -1.0V for the period shorter than or equal to 5ns. 4. VIN (DC) specifies the allowable dc execution of each differential input. 5. VID (dc) specifies the input differential voltage required for switching. 6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF - 0.18V if measurement.
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
DC Characteristics 1 (TA = 0 to 70C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V)
Parameter Operating current (ACTV-PRE) Operating current (ACTV-READ-PRE) Idle power down standby current Floating idle standby current Quiet idle standby current Active power down standby current Active standby current Operating current (Burst read operation) Operating current (Burst write operation) Auto refresh current Self refresh current Operating current (4 banks interleaving) Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 IDD7A -6B -7A, -7B -6B -7A, -7B -6B -7A, -7B -6B -7A, -7B -6B -7A, -7B -6B -7A, -7B Grade -6B -7A, -7B -6B -7A, -7B max. 1980 1755 2250 1980 54 720 630 450 360 1260 1080 2520 2160 2520 2160 5220 4860 72 4500 3870 Unit mA mA mA mA mA mA mA mA mA mA mA mA Test condition CKE VIH, tRC = tRC (min.) CKE VIH, BL = 2, CL = 2.5, tRC = tRC (min.) CKE VIL Notes 1, 2, 9 1, 2, 5 4
CKE VIH, /CS VIH, 4, 5 DQ, DQS, DM = VREF CKE VIH, /CS VIH, 4, 10 DQ, DQS, DM = VREF CKE VIL CKE VIH, /CS VIH tRAS = tRAS (max.) CKE VIH, BL = 2, CL = 2.5 CKE VIH, BL = 2, CL = 2.5 tRFC = tRFC (min.), Input VIL or VIH Input VDD - 0.2 V Input 0.2 V BL = 4 5, 6, 7 3 3, 5, 6 1, 2, 5, 6 1, 2, 5, 6
Notes. 1. These IDD data are measured under condition that DQ pins are not connected. 2. One bank operation. 3. One bank active. 4. All banks idle. 5. Command/Address transition once per one cycle. 6. Data/Data mask transition twice per one cycle. 7. 4 banks active. Only one bank is running at tRC = tRC (min.) 8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general. 9. Command/Address transition once every two clock cycles. 10. Command/Address stable at VIH or VIL.
DC Characteristics 2 (TA = 0 to 70C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V)
Parameter Input leakage current Output leakage current Output high current Output low current Symbol ILI ILO IOH IOL min. -36 -10 -15.2 15.2 max. 36 10 -- -- Unit A A mA mA Test condition VDD VIN VSS VDD VOUT VSS VOUT = 1.95V VOUT = 0.35V Notes
Pin Capacitance (TA = 25C, VDD, VDDQ = 2.5V 0.2V)
Parameter Input capacitance Input capacitance Data and DQS input/output capacitance Symbol CI1 CI2 CO Pins Address, /RAS, /CAS, /WE, /CS, CKE CK, /CK DQ, DQS, CB max. TBD TBD TBD Unit pF pF pF Notes
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
AC Characteristics (TA = 0 to +70C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V) (DDR SDRAM Device Specification)
-6B Parameter Clock cycle time (CL = 2) (CL = 2.5) CK high-level width CK low-level width CK half period Symbol tCK tCK tCH tCL tHP min. 7.5 6 0.45 0.45 min (tCH, tCL) max. 12 12 0.55 0.55 -- 0.7 0.6 0.45
-7A min. 7.5 7.5 0.45 0.45 min (tCH, tCL) -0.75 -0.75 -- max 12 12 0.55 0.55 -- 0.75 0.75 0.5
-7B min. 10 7.5 0.45 0.45 min (tCH, tCL) -0.75 -0.75 -- max 12 12 0.55 0.55 -- 0.75 0.75 0.5 Unit Notes ns ns tCK tCK tCK ns ns ns ns ns ns ns tCK tCK ns ns ns ns tCK tCK tCK tCK tCK tCK tCK ns ns ns tCK ns ns 8 8 7 9 8 8 7 5, 11 6, 11 2, 11 2, 11 3 10
DQ output access time from tAC -0.7 CK, /CK DQS output access time from tDQSCK -0.6 CK, /CK DQS to DQ skew DQ/DQS output hold time from DQS Data hold skew factor tDQSQ tQH tQHS --
tHP - tQHS -- -- -0.7 -0.7 0.9 0.4 0.45 0.45 1.75 0.55 0.7 0.7 1.1 0.6 -- -- -- -- -- 0.6 1.25 -- -- -- -- -- -- -- -- 120000 --
tHP - tQHS -- -- -0.75 -0.75 0.9 0.4 0.5 0.5 1.75 0 0.25 0.4 0.75 0.2 0.2 0.35 0.35 0.9 0.9 2.2 2 45 67.5 0.75 0.75 0.75 1.1 0.6 -- -- -- -- -- 0.6 1.25 -- -- -- -- -- -- -- -- 120000 --
tHP - tQHS -- -- -0.75 -0.75 0.9 0.4 0.5 0.5 1.75 0 0.25 0.4 0.75 0.2 0.2 0.35 0.35 0.9 0.9 2.2 2 45 67.5 0.75 0.75 0.75 1.1 0.6 -- -- -- -- -- 0.6 1.25 -- -- -- -- -- -- -- -- 120000 --
Data-out high-impedance tHZ time from CK, /CK Data-out low-impedance time tLZ from CK, /CK Read preamble Read postamble tRPRE tRPST
DQ and DM input setup time tDS DQ and DM input hold time tDH
DQ and DM input pulse width tDIPW Write preamble setup time Write preamble Write postamble
tWPRES 0 tWPRE tWPST 0.25 0.4 0.75 0.2 0.2 0.35 0.35 0.75 0.75 2.2 2 42 60
Write command to first DQS tDQSS latching transition DQS falling edge to CK setup tDSS time DQS falling edge hold time tDSH from CK DQS input high pulse width DQS input low pulse width Address and control input setup time Address and control input hold time Address and control input pulse width Mode register set command cycle time Active to Precharge command period Active to Active/Auto refresh command period tDQSH tDQSL tIS tIH tIPW tMRD tRAS tRC
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
-6B Parameter Auto refresh to Active/Auto refresh command period Active to Read/Write delay Precharge to active command period Active to auto precharge delay Active to active command period Write recovery time Symbol tRFC tRCD tRP tRAP tRRD tWR min. 72 18 18 tRCD min. 12 15 max. -- -- -- -- -- -- -7A min. 75 20 20 tRCD min. 15 15 max -- -- -- -- -- -- -7B min. 75 20 20 tRCD min. 15 15 max -- -- -- -- -- -- Unit Notes ns ns ns ns ns ns tCK tCK s 13
Auto precharge write tDAL recovery and precharge time Internal write to Read tWTR command delay Average periodic refresh tREF interval
(tWR/tCK)+ -- (tRP/tCK) 1 -- -- 7.8
(tWR/tCK)+ -- (tRP/tCK) 1 -- -- 7.8
(tWR/tCK)+ -- (tRP/tCK) 1 -- -- 7.8
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter definitions, see `Timing Waveforms' section. 2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal transition is defined to occur when the signal level crossing VTT. 3. The timing reference level is VTT. 4. Output valid window is defined to be the period between two successive transition of data out or DQS (read) signals. The signal transition is defined to occur when the signal level crossing VTT. 5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage level, but specify when the device output stops driving. 6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This parameter is not referred to a specific DOUT voltage level, but specify when the device output begins driving. 7. Input valid windows is defined to be the period between two successive transition of data input or DQS (write) signals. The signal transition is defined to occur when the signal level crossing VREF. 8. The timing reference level is VREF. 9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific reference voltage to judge this transition is not given. 10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not assured. 11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these values are 10% of tCK. 12. VDD is assumed to be 2.5V 0.2V. VDD power supply variation per cycle expected to be less than 0.4V/400 cycle. 13. tDAL = (tWR/tCK)+(tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For -7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns, tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3) tDAL = 5 clocks
Preliminary Data Sheet E0295E20 (Ver. 2.0)
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EBD11ED8ABFB
Timing Parameter Measured in Clock Cycle for unbuffered DIMM
Number of clock cycle tCK Parameter Write to pre-charge command delay (same bank) Read to pre-charge command delay (same bank) Write to read command delay (to input all data) Burst stop command to write command delay (CL = 2) (CL = 2.5) Burst stop command to DQ High-Z (CL = 2) (CL = 2.5) Read command to write command delay (to output all data) (CL = 2) (CL = 2.5) Pre-charge command to High-Z (CL = 2) (CL = 2.5) Write command to data in latency Write recovery time DM to data in latency Mode register set command cycle time Self refresh exit to non-read command Self refresh exit to read command Power down entry Power down exit to command input Symbol tWPD tRPD tWRD tBSTW tBSTW tBSTZ tBSTZ tRWD tRWD tHZP tHZP tWCD tWR tDMD tMRD tSNR tSRD tPDEN tPDEX 6ns min. 4 + BL/2 BL/2 2 + BL/2 2 3 2 2.5 2 + BL/2 3 + BL/2 2 2.5 1 3 0 2 12 200 1 1 1 0 2 2.5 1 2 2.5 max. 7.5ns min. 3 + BL/2 BL/2 2 + BL/2 2 3 2 2.5 2 + BL/2 3 + BL/2 2 2.5 1 2 0 2 10 200 1 1 1 0 2 2.5 1 2 2.5 max.
Preliminary Data Sheet E0295E20 (Ver. 2.0)
14
EBD11ED8ABFB
Pin Functions
CK, /CK (input pin) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A12 (input pins) Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9, AY11) is loaded via theA0 to the A9 and the A11 at the cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address becomes the starting address of a burst operation. A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled. BA0, BA1 (input pin) BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) [Bank Select Signal Table]
BA0 Bank 0 Bank 1 Bank 2 Bank 3 L H L H BA1 L L H H
Remark: H: VIH. L: VIL. CKE (input pin) CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the CKE is driven low and exited when it resumes to high. The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold time tIH. DQ, CB (input and output pins) Data are input to and output from these pins. DQS (input and output pin) DQS provide the read data strobes (as output) and the write data strobes (as input).
Preliminary Data Sheet E0295E20 (Ver. 2.0)
15
EBD11ED8ABFB
DM (input pins): DM is the reference signal of the data input mask function. DMs are sampled at the cross point of DQS and VREF VDD and VDDQ (power supply pins) 2.5V is applied. (VDD is for the internal circuit and VDDQ is for the output buffer.) VDDSPD (power supply pin) 2.5V is applied (For serial EEPROM). VSS (power supply pin) Ground is connected.
Detailed Operation Part, AC Characteristics and Timing Waveforms
Refer to the EDD5104ABTA, EDD5108ABTA datasheet (E0237E).
Preliminary Data Sheet E0295E20 (Ver. 2.0)
16
EBD11ED8ABFB
Physical Outline
Unit: mm 133.35 0.15 128.95 4.00 max (64.48) (DATUM -A-)
2.30
Component area (Front)
1 B 64.77 49.53 A 92
1.27 0.10
2 - 2.50 0.10
10.00
93
184
4.00 min
3.00 min (DATUM -A-) 6.62 2.175 R 0.90 6.35 1.80 0.10
Component area (Back)
4.00 0.10
R 2.00
Detail A
Detail B 1.27 typ
2.50 0.20
0.20 0.15
1.00 0.05
Note: Tolerance on all dimensions 0.13 unless otherwise specified.
3.80
Preliminary Data Sheet E0295E20 (Ver. 2.0)
17
31.75 0.15
17.80
ECA-TS2-0040-01
EBD11ED8ABFB
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. In particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. When re-packing memory modules, be sure the modules are not touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules.
MDE0202
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function.
CME0107
Preliminary Data Sheet E0295E20 (Ver. 2.0)
18
EBD11ED8ABFB
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations.
M01E0107
Preliminary Data Sheet E0295E20 (Ver. 2.0)
19

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